Takayoshi Tsutsumi

nagoya university

H指数:19

被引数:1,057

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Cryogenic HF plasma etching of SiO₂: Etchant penetration, reactions, and damage formation

低温HF等离子体刻蚀SiO<sub>2</sub>：刻蚀剂渗透、反应及损伤形成

Applied Surface Science

IF6.9

2026-08-310

PRE

Etch profiles in silicon in SF6 and O2 plasma based on etch-depth-dependent O/F transport gradient model

基于蚀刻深度依赖的O/F传输梯度模型的SF6和O2等离子体中硅的蚀刻形貌

Japanese Journal of Applied Physics

IF1.8

2026-04-301

PRE

Formation of SCF+, SCF2+, and CS2+ ions during gas modulation cycles associated with interference between alternating C4F8 and SF6 in Ar plasma

在Ar等离子体中交替C4F8和SF6产生的干扰与气相调制周期相关的SCF+、SCF2+和CS2+离子的形成

Japanese Journal of Applied Physics

IF1.8

2026-02-160

PRE

Development and investigation of a large-diameter helium atmospheric-pressure plasma jet with floating electrode configuration

带悬浮电极配置的大直径氦气常压等离子体射流的发展与探究

Japanese Journal of Applied Physics

IF1.8

2026-01-300

PRE

SiO2 etch-damage mitigation in fluorocarbon C 4F 8 plasma: CF x polymer deposition and polyatomic ion effects

SiO2刻蚀损伤缓解在氟碳C4F8等离子体中：CFx聚合物沉积和多原子离子效应

Applied Surface Science

IF6.9

2025-08-070

PRE

SiO2/Si stack's damage in plasma processing: Ar, O2, and H2 gas species effect on damage formation, structure, and recovery

SiO2/Si堆叠结构在等离子体处理中的损伤：Ar、O2和H2气体种类对损伤形成、结构和恢复的影响

SURFACES AND INTERFACES

IF6.3

2025-04-010

PRE

Achieving the In-plane Orientation of Carbon Nanowalls: Implications for Sensing, Energy Harvesting, and Nanobio Devices

实现碳纳米墙的面内取向：对传感、能量收集和纳米生物器件的意义

ACS APPLIED NANO MATERIALS

IF5.5

2025-02-020

Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor

APPLIED SURFACE SCIENCE

IF6.9

2025-02-010

OAAI

Radical, ion, and photon's effects on defect generation at SiO2/Si interface during plasma etching

APPLIED SURFACE SCIENCE

IF6.9

2024-11-015

PRE

Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6

根据交替注入C4F8和SF6的Ar等离子体中硅沟槽蚀刻的纵横比依赖性定制的偏置电源时序

APPLIED SURFACE SCIENCE

IF6.9

2023-11-014

OAAI

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

VACUUM

IF3.9

2023-04-0117

PRE

Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis

基于质谱仪测量和机器学习分析氢化非晶碳膜沉积前驱体对等离子体刻蚀电阻的影响

VACUUM

IF3.9

2022-11-0113

OAAI

Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure

LANGMUIR

IF3.9

2021-10-206

PREAI

Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar

APPLIED SURFACE SCIENCE

IF6.9

2021-03-0121

PREAI

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H2 plasma

APPLIED SURFACE SCIENCE

IF6.9

2021-03-0124

PREAI

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H2/Ar plasma at atmospheric pressure

SCIENTIFIC REPORTS

IF3.9

2020-10-2011

OAAI

Numerical simulations of stable, high-electron-density atmospheric pressure argon plasma under pin-to-plane electrode geometry: effects of applied voltage polarity

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-04-3026

OAAI

Electron and negative ion dynamics in a pulsed 100 MHz capacitive discharge produced in an O2 and Ar/O2/C4F8 gas mixture

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2020-03-135

PREAI

Generation and Diagnostics of Ambient Air Glow Discharge in Centimeter-Order Gaps

IEEE ACCESS

IF3.6

2020-01-017

OAAI

In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-09-1230

PREAI

Takayoshi Tsutsumi

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