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M

Makoto Sekine

nagoya university
H指数:32
被引数:5,029
浏览量:0

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Role of CF4 Addition in Gas-Phase Variations in HF Plasma for Cryogenic Etching: Insights from Plasma Simulation and Experimental Correlation

CF4添加在低温刻蚀HF等离子体气相变化中的作用：来自等离子体模拟与实验关联的见解

PLASMA
IF1.7
2025-11-240
OA
Takagi, Shigeyuki; Hsiao, Shih-Nan; Imai, Yusuke; Sekine, Makoto; Matsunaga, Fumihiko
Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3
APPLIED SURFACE SCIENCE
IF6.9
2025-03-010
OAAI
Tran, Trung Nguyen; Hayashi, Toshio; Iwayama, Hiroshi; Sekine, Makoto; Hori, Masaru; Ishikawa, Kenji
Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H2 and CF4/H2 Plasmas
ACS APPLIED ELECTRONIC MATERIALS
IF4.7
2023-12-1214
PRE
Hsiao, Shih-Nan; Britun, Nikolay; Nguyen, Thi-Thuy-Nga; Sekine, Makoto; Hori, Masaru
An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases
APPLIED PHYSICS LETTERS
IF3.6
2023-11-2111
PRE
Hsiao, Shih-Nan; Sekine, Makoto; Ishikawa, Kenji; Iijima, Yuki; Ohya, Yoshinobu; Hori, Masaru
Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6

根据交替注入C4F8和SF6的Ar等离子体中硅沟槽蚀刻的纵横比依赖性定制的偏置电源时序

APPLIED SURFACE SCIENCE
IF6.9
2023-11-014
OAAI
Yoshie, Taito; Ishikawa, Kenji; Nguyen, Thi-Thuy-Nga; Hsiao, Shih-Nan; Tsutsumi, Takayoshi; Sekine, Makoto; Hori, Masaru
In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2023-07-138
PRE
Hsiao, Shih-Nan; Sekine, Makoto; Hori, Masaru
Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma
VACUUM
IF3.9
2023-04-0117
PRE
Hsiao, Shih-Nan; Britun, Nikolay; Nguyen, Thi-Thuy-Nga; Tsutsumi, Takayoshi; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru
Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis

基于质谱仪测量和机器学习分析氢化非晶碳膜沉积前驱体对等离子体刻蚀电阻的影响

VACUUM
IF3.9
2022-11-0113
OAAI
Kurokawa, Jumpei; Kondo, Hiroki; Tsutsumi, Takayoshi; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru
Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar
APPLIED SURFACE SCIENCE
IF6.9
2021-03-0121
PREAI
Hsiao, Shih-Nan; Ishikawa, Kenji; Hayashi, Toshio; Ni, Jiwei; Tsutsumi, Takayoshi; Sekine, Makoto; Hori, Masaru
Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H2 plasma
APPLIED SURFACE SCIENCE
IF6.9
2021-03-0124
PREAI
Hsiao, Shih-Nan; Nakane, Kazuya; Tsutsumi, Takayoshi; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru
Transparent elongation and compressive strain sensors based on aligned carbon nanowalls embedded in polyurethane
SENSORS AND ACTUATORS A-PHYSICAL
IF4.9
2020-05-015
PREAI
Slobodian, Petr; Riha, Pavel; Kondo, Hiroki; Cvelbar, Uros; Olejnik, Robert; Matyas, Jiri; Sekine, Makoto; Hori, Masaru
Electron and negative ion dynamics in a pulsed 100 MHz capacitive discharge produced in an O2 and Ar/O2/C4F8 gas mixture
PLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
2020-03-135
PREAI
Sirse, N.; Tsutsumi, T.; Sekine, M.; Hori, M.; Ellingboe, A. R.
Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
2019-01-116
PREAI
Imai, Shun; Naito, Kenichi; Kondo, Hiroki; Cho, Hyung Jun; Ishikawa, Kenji; Tsutsumi, Takayoshi; Sekine, Makoto; Hiramatsu, Mineo; Hori, Masaru
Oriented Carbon Nanostructures by Plasma Processing: Recent Advances and Future Challenges
MICROMACHINES
IF3
2018-11-0166
OAAI
Santhosh, Neelakandan M.; Filipic, Gregor; Tatarova, Elena; Baranov, Oleg; Kondo, Hiroki; Sekine, Makoto; Hori, Masaru; Ostrikov, Kostya (Ken); Cvelbar, Uros
Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300-500 °C
VACUUM
IF3.9
2018-10-017
PREAI
Kako, Takashi; Liu, Zecheng; Ishikawa, Kenji; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru
Electron impact ionization of perfluoro-methyl-vinyl-ether C3F6O
PLASMA SOURCES SCIENCE & TECHNOLOGY
IF3.3
2018-01-0813
PREAI
Kondo, Yusuke; Ishikawa, Kenji; Hayashi, Toshio; Sekine, Makoto; Hori, Masaru
High-durability catalytic electrode composed of Pt nanoparticle-supported carbon nanowalls synthesized by radical-injection plasma-enhanced chemical vapor deposition
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
2017-09-1115
PREAI
Imai, Shun; Kondo, Hiroki; Cho, Hyungjun; Kano, Hiroyuki; Ishikawa, Kenji; Sekine, Makoto; Hiramatsu, Mineo; Ito, Masafumi; Hori, Masaru
Measurement of F-, O- and CF3- densities in 60 and 100 MHz asymmetric capacitively coupled plasma discharge produced in an Ar/O2/C4F8 gas mixture
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
2017-07-2716
PREAI
Sirse, N.; Tsutsumi, T.; Sekine, M.; Hori, M.; Ellingboe, A. R.
Spatial distributions of O, N, NO, OH and vacuum ultraviolet light along gas flow direction in an AC-excited atmospheric pressure Ar plasma jet generated in open air
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
2017-04-1341
PREAI
Takeda, Keigo; Ishikawa, Kenji; Tanaka, Hiromasa; Sekine, Makoto; Hori, Masaru
Spatial profiles of interelectrode electron density in direct current superposed dual-frequency capacitively coupled plasmas
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
2017-03-1018
PREAI
Ohya, Yoshinobu; Ishikawa, Kenji; Komuro, Tatsuya; Yamaguchi, Tsuyoshi; Takeda, Keigo; Kondo, Hiroki; Sekine, Makoto; Hori, Masaru

研究方向

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M
Masaru Hori
H 指数:62论文数:1,166被引数:1.7万
K
Kenji Ishikawa
H 指数:50论文数:791被引数:1.1万
H
Hiroki Kondo
H 指数:46论文数:769被引数:8,943
K
Keigo Takeda
H 指数:29论文数:282被引数:2,812
T
Takayoshi Tsutsumi
H 指数:19论文数:178被引数:1,057
S
Shih‐Nan Hsiao
H 指数:15论文数:91被引数:862
T
Toshio Hayashi
H 指数:28论文数:238被引数:2,903
Y
Yuichi Setsuhara
H 指数:28论文数:374被引数:3,033
M
Masaharu Shiratani
H 指数:46论文数:734被引数:8,539
T
Thi‐Thuy‐Nga Nguyen
H 指数:10论文数:35被引数:264