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st micro electronics

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Revealing threading dislocations in epitaxial GaN: a comparative study of electron channeling contrast imaging, KOH etch, and TEM characterization

揭示外延GaN中的穿透位错：电子通道衬度成像、KOH腐蚀和TEM表征的比较研究

Semiconductor Science and Technology

IF2.1

2026-02-010

PRE

Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

APPLIED SURFACE SCIENCE

IF6.9

2024-11-010

OAAI

Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-013

PRE

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

APPLIED PHYSICS LETTERS

IF3.6

2020-07-069

OAAI

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

IF3.2

2019-10-2310

OAAI

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

SiO2/4H-SiC MOS电容器中温度相关的fowler-nordheim电子势垒高度

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-0129

OAAI

Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-09-2627

PREAI