Binjian Zeng

Xiangtan University

H指数:17

被引数:907

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Ultralow-Voltage BEOL-Compatible HZO Ferroelectric Memcapacitors for Neuromorphic Computing

超低电压BEOL兼容的HZO铁电忆容器的神经形态计算

IEEE Electron Device Letters

IF4.5

2026-04-280

PRE

Direct observation of phase transition in Hf0.5Zr0.5O2 thin films affected by top electrodes using in-situ STEM heating

利用原位STEM加热技术观察受顶电极影响的Hf0.5Zr0.5O2薄膜中的相变

Journal of Materiomics

IF9.6

2025-05-090

OAAI

Polarization switching of HfO2 ferroelectric in bulk and electrode/ferroelectric/electrode heterostructure

块材和电极/铁电体/电极异质结构中HfO2铁电体的极化翻转

NPJ COMPUTATIONAL MATERIALS

IF11.9

2025-05-080

Structural characteristics and polarization switching behaviors in HfO2-ZrO2 2-ZrO 2 ferroelectric nanolaminates

HfO2-ZrO2 2-ZrO 2铁电纳米叠层的结构特征和极化转换行为

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-11-010

PRE

Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

ACTA MATERIALIA

IF9.3

2024-06-017

PRE

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

JOURNAL OF MATERIOMICS

IF9.6

2024-03-016

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

APL MATERIALS

IF4.5

2024-01-126

Effects of annealing conditions on structural and ferroelectric properties of CeO2-HfO2 solid solution thin films on InAs substrates fabricated by chemical solution deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-12-014

PRE

Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2-δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

通过调整氧空位来增强Hf0.5Zr0.5O2-δ 铁电电容器的耐久性和压印性能

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-08-1018

PRE

Improved ferroelectric and endurance properties of Hf0.5Zr0.5O2 thin films by a replacement indium-tin-oxide top electrode process

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-06-194

PRE

HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review

FUNDAMENTAL RESEARCH

IF6.3

2023-05-0122

OAAI

Highly Enhanced Polarization Switching Speed in HfO2-based Ferroelectric Thin Films via a Composition Gradient Strategy

通过成分梯度策略在HfO2-based铁电薄膜中高度增强的极化切换速度

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-04-1811

PRE

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

RESEARCH

IF10.7

2023-01-0113

OAAI

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors

坚固稳定的铁电极化状态可在HfO2-Based铁电场效应晶体管中实现长期非易失性存储以抵抗辐射

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-11-018

PRE

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High-Density 3D Memory Applications

用于高密度3D存储器应用的硅上均匀铁电Hf0.5Zr0.5O2薄膜的取向无关生长

ADVANCED FUNCTIONAL MATERIALS

IF19

2022-10-2624

PRE

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

本征90 ° 带电畴壁及其对铁电性能的影响

ACTA MATERIALIA

IF9.3

2022-06-0122

PRE

Robustly stable intermediate memory states in HfO2-based ferroelectric field-effect transistors

HfO2-based铁电场效应晶体管中的稳定中间存储状态

JOURNAL OF MATERIOMICS

IF9.6

2022-05-017

Electric Field Gradient-Controlled Domain Switching for Size Effect-Resistant Multilevel Operations in HfO2-Based Ferroelectric Field-Effect Transistor

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-02-2357

PREAI

Improvement of remanent polarization of CeO2-HfO2 solid solution thin films on Si substrates by chemical solution deposition

化学溶液沉积改善Si衬底上CeO2-HfO2固溶体薄膜的剩余极化

APPLIED PHYSICS LETTERS

IF3.6

2020-11-2428

PREAI

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

APPLIED PHYSICS LETTERS

IF3.6

2014-05-0541

PREAI

Binjian Zeng

个人简介

教育背景

工作经历

荣誉奖项

研究方向