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Yogesh Singh Chauhan

indian institute of technology kanpur

44H指数
578论文数
7.6K被引数
收录论文 49
发表时间
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Pushing the Limits of Computing: Transistor-to-Processor Benchmarking at 77 K With Self-Heating Effect推动计算极限：77 K下考虑自加热效应的晶体管至处理器级基准测试
errIEEE Transactions on Computers
IF3.8
err2026-07-17
err0
errOAAI
errShivendra Singh Parihar; Florian Klemme; Anirban Kar; Yogesh Singh Chauhan; Hussam Amrouch
err分享
err收藏
Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI使用可解释的AI解释基于人工神经网络的4 h-sic mosfet建模
errScientific Reports
IF3.9
err2026-01-15
err0
errOAAI
errYu-Sheng Hsiao; Pei-Jie Chang; Bang-Ren Chen; Rushat Rai; Shivendra Kumar Singh; Yogesh Singh Chauhan; Wen-Jay Lee; Nan-Yow Chen; Tian-Li Wu
err分享
err收藏
Evaluation of Radiation Resilience, Performance, and Vmin of Sub-3 nm FSFET Based SRAM Arrays评估亚3nm FSFET基SRAM阵列的辐射抗扰性、性能和Vmin
errIEEE Transactions on Computers
IF3.8
err2025-12-29
err0
PREAI
errHafeez Raza; Mahdi Benkhelifa; Koshal Kumar; Shivendra Singh Parihar; Yogesh Singh Chauhan; Hussam Amrouch; Avinash Lahgere
err分享
err收藏
Compact GaN-Based DCFL Amplifier With Direct-Coupled Loads for Wide-Temperature Applications
errIEEE Electron Device Letters
IF4.5
err2025-12-09
err0
PREAI
errShivendra Kumar Singh; Yogesh Singh Chauhan; Tian-Li Wu
err分享
err收藏
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron–Hole Recombination for Solar Water Splitting用于太阳能水分解的高通量筛选抑制电子-空穴复合的二维光催化剂异质结构
errACS Applied Energy Materials
IF5.5
err2025-09-26
err0
PREAI
errShivanand Yadav; Jainandan Kumar Modi; Raihan Ahammed; B. S. Bhadoria; Yogesh S. Chauhan; Amit Agarwal; Somnath Bhowmick
err分享
err收藏
Ferroelectric Digital In-Memory Computing for Scalable, Reliable, and Efficient Similarity Computation用于可扩展，可靠和高效的相似性计算的铁电数字内存计算
errieee transactions on circuits and systems i: regular papers
IF0
err2025-09-24
err0
errOAAI
errAnirban Kar; Albi Mema; Thorgund Nemec; Stefan Dünkel; Halid Mulaosmanovic; Sven Beyer; Yogesh Singh Chauhan; Hussam Amrouch
err分享
err收藏
Cryo-CACTI: Cryogenic-Aware CACTI for Cache Modeling Down to 10K in Advanced 7nm FinFETsCryo-CACTI：面向低温感知的CACTI缓存建模工具，适用于先进7nm FinFET技术节点，温度范围低至10K
errIEEE Transactions on Computers
IF3.8
err2025-08-01
err0
PREAI
errDivya Praneetha Ravipati; Victor M. van Santen; Shivendra Singh Parihar; Yogesh Singh Chauhan; Preeti Ranjan Panda; Hussam Amrouch
err分享
err收藏
Novel Nondestructive Methodology Using PV Measurement With NLS-Based Analysis and GIXRD for Comprehensive O/T/M Phase Analyses in Ferroelectric HZO新型非破坏性方法学：采用基于NLS分析的PV测量与GIXRD相结合，对铁电HZO材料进行全面的O/T/M相分析。
errIEEE Transactions on Electron Devices
IF3.2
err2025-07-01
err0
PREAI
errHsien-Yang Liu; Wei-Cheng Peng; Chen-Yu Yu; Ivan Kuznietsov; Chiung-Yuan Lin; Yogesh Singh Chauhan; Tian-Li Wu
err分享
err收藏
Engineering Si-Qubit MOSFET: Quantum-Electrostatic Integration at Cryogenic Temperatures工程化Si量子比特MOSFET：低温下的量子静电集成
errIEEE Transactions on Electron Devices
IF3.2
err2025-07-01
err0
PREAI
errNilesh Pandey; Dipanjan Basu; Yogesh Singh Chauhan; Leonard F. Register; Sanjay K. Banerjee
err分享
err收藏
Comprehensive analysis and investigation of GaN LNA for 3–4 GHz using different gate-drain spacing基于不同栅漏间距的3–4 GHz GaN LNA综合分析与研究
errMicroelectronic Engineering
IF3.1
err2025-05-22
err0
PREAI
errMd Hasnain Ansari; Siddharth Thakur; Neha Bajpai; Paramita Maity; Avinash Lahgere; Sheikh Aamir Ahsan; Manish Shah; Yogesh Singh Chauhan
err分享
err收藏
Exploiting drain-erase scheme in ferroelectric FETs for logic-in-memory利用铁电FET的漏极擦除方案实现存内逻辑
errNEUROMORPHIC COMPUTING AND ENGINEERING
IF6.1
err2025-05-06
err0
errOAAI
errRafiq, Musaib; Chauhan, Yogesh Singh
err分享
err收藏
Harnessing Gaussianlike transfer characteristics for ultraefficient computation in monolayer two-dimensional devices
errPHYSICAL REVIEW APPLIED
IF4.4
err2025-04-10
err1
PREAI
errNaseer, Ateeb; Nandan, Keshari; Rafiq, Musaib; Agarwal, Amit; Bhowmick, Somnath; Chauhan, Yogesh Singh
err分享
err收藏
A Lightweight PUF-Based Weights Obfuscation Technique for Secure In-Memory AI Inference一种基于PUF的轻量级权重混淆技术，用于安全内存内AI推理
errIEEE Transactions on Circuits and Systems I: Regular Papers
IF0
err2025-01-01
err0
PREAI
errLuca Parrini; Anirban Kar; Benjamin Hettwer; Taha Soliman; Yogesh Singh Chauhan; Hussam Amrouch; Norbert Wehn
err分享
err收藏
Switchable and Tunable Salisbury Screen Microwave Absorber Based on a Uniform Vanadium Dioxide Film
errIEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS
IF4.8
err2024-11-01
err0
PREAI
errMishra, Abhishek; Jaiswal, Rahul; Srivastava, Kumar Vaibhav; Chauhan, Yogesh Singh; Verma, Amit
err分享
err收藏
Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-07
err0
PREAI
errSingh, Shivendra Kumar; Ngo, Thien Sao; Wu, Tian-Li; Chauhan, Yogesh Singh
err分享
err收藏
Thermal Effects on Monolithic 3D Ferroelectric Transistors for Deep Neural Networks Performance用于深度神经网络性能的单片3D铁电晶体管的热效应
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2024-07-03
err0
errOAAI
errKumar, Shubham; Chauhan, Yogesh Singh; Amrouch, Hussam
err分享
err收藏
Room-Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-Metallic Monolayer CrTe半金属单层CrTe中的室温铁电性，铁磁性和反常霍尔效应
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-05-09
err2
errOAAI
errAhamed, Imran; Chakraborty, Atasi; Yadav, Pushpendra; Dey, Rik; Chauhan, Yogesh Singh; Bhowmick, Somnath; Agarwal, Amit
err分享
err收藏
Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers
errNANOSCALE
IF5.1
err2024-01-01
err2
errOAAI
errNaseer, Ateeb; Priydarshi, Achintya; Ghosh, Pritam; Ahammed, Raihan; Chauhan, Yogesh Singh; Bhowmick, Somnath; Agarwal, Amit
err分享
err收藏
Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability优化低噪声放大器: 改善噪声系数和稳定性的两级方法
errIEEE ACCESS
IF3.6
err2024-01-01
err1
errOAAI
errZaid, Mohammad; Kumari, Purnima; Pampori, Ahtisham; Nazir, Mohammad Sajid; Goyal, Umakant; Mishra, Meena; Chauhan, Yogesh Singh
err分享
err收藏
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET使用双端口铁电FET为无干扰的可重构计算和可调谐模拟电子设备供电
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-11-14
err1
errOAAI
errZhao, Zijian; Deng, Shan; Chatterjee, Swetaki; Jiang, Zhouhang; Islam, Muhammad Shaffatul; Xiao, Yi; Xu, Yixin; Meninger, Scott; Mohamed, Mohamed; Joshi, Rajiv; Chauhan, Yogesh Singh; Mulaosmanovic, Halid; Duenkel, Stefan; Kleimaier, Dominik; Beyer, Sven; Amrouch, Hussam; Narayanan, Vijaykrishnan; Ni, Kai
err分享
err收藏

研究方向

暂无研究方向
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