Qimeng Jiang

qilu university of technology

H指数:27

被引数:3,126

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Improved Interface Quality and Stability of AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using N2-Annealed Atomic-Layer-Deposited SiNx Gate Dielectrics

采用N2退火原子层沉积SiNx栅介质提高AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管的界面质量和稳定性

ACS Applied Materials and Interfaces

IF8.2

2026-02-100

PRE

Contrasting Catalytic Pathways in Lignin Pyrolysis: Deoxygenative Cracking over HZSM-5 Versus Repolymerization–Coking over Activated Carbon

木质素热解中不同的催化途径: HZSM-5上的脱氧裂化与活性炭上的再聚合焦化

Polymers

IF4.9

2026-02-050

OAAI

10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension

10000-周期/10-μs短路操作在650-V E-Mode p-GaN栅高电子迁移率晶体管（HEMT）中的应用，该晶体管带有肖特基源扩展。

IEEE Transactions on Electron Devices

IF3.2

2026-02-030

PRE

Structure-Engineered Biomass-Derived Carbon Nanosheets Hosting Atomically Dispersed Iron for Efficient Zn-air Batteries

结构工程化的生物质衍生碳纳米片负载原子级分散的铁用于高效锌-空气电池

Energy & Fuels

IF0

2026-02-011

PRE

Sky-FET: A Selective Area Regrown GaN Power Device With Enhanced Breakdown Voltage

Sky-FET：一种选择性区域再生长GaN功率器件，具有增强的击穿电压

IEEE Electron Device Letters

IF4.5

2026-01-060

PRE

Dislocation-assisted electron and hole transport in GaN epitaxial layers

位错辅助的电子和空穴输运在GaN外延层中

Nature Communications

IF15.7

2025-07-120

Threshold voltage instability in III-nitride heterostructure metal-insulator-semiconductor high-electron-mobility transistors: Characterization and interface engineering

III族氮化物异质结构金属-绝缘体-半导体高电子迁移率晶体管的阈值电压不稳定性: 表征和界面工程

APPLIED PHYSICS REVIEWS

IF11.6

2024-05-311

Heterogeneous integration of thick GaN and polycrystalline diamond at room temperature through dynamic plasma polishing and surface-activated bonding

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-05-011

PRE

Publisher's Note: Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors [Appl. Phys. Lett. 123, 262107 (2023)]

APPLIED PHYSICS LETTERS

IF3.6

2024-04-100

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2023-12-274

PRE

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Al2O3栅介质体陷阱的抑制机理及其对Al2O3/AlGaN/GaN金属氧化物半导体高电子迁移率晶体管阈值电压不稳定性的影响

APPLIED SURFACE SCIENCE

IF6.9

2023-11-0112

PRE

Montmorillonite and AgNPs modified corn stalk-based filling material with fire retardancy and antibacterial activity

INDUSTRIAL CROPS AND PRODUCTS

IF6.2

2023-08-012

PRE

Corn stalk modified chitin composite sponge for effective hemostasis and promoting wound healing

INTERNATIONAL JOURNAL OF BIOLOGICAL MACROMOLECULES

IF8.5

2023-07-013

PRE

Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2023-07-0123

PRE

Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices

在GaN基金属-绝缘体-半导体电子器件中通过高温远程等离子体预处理有效抑制GaN表面上的非晶Ga2O和相关深能级

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-05-1014

PRE

Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition

通过等离子体增强原子层沉积生长的SiOxNy界面层有效抑制SiNx/GaN金属-绝缘体-半导体结构中的深界面态和介电俘获

APPLIED SURFACE SCIENCE

IF6.9

2023-01-019

PRE

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2021-12-096

PRE

A Novel and Effective Recyclable BiOCl/BiOBr Photocatalysis for Lignin Removal from Pre-Hydrolysis Liquor

NANOMATERIALS

IF4.3

2021-10-252

OAAI

Corn stalk/AgNPs modified chitin composite hemostatic sponge with high absorbency, rapid shape recovery and promoting wound healing ability

CHEMICAL ENGINEERING JOURNAL

IF13.2

2021-10-0172

PREAI

A sandwich-like chitosan-based antibacterial nanocomposite film with reduced graphene oxide immobilized silver nanoparticles

具有还原的氧化石墨烯固定的银纳米颗粒的三明治状壳聚糖基抗菌纳米复合膜

CARBOHYDRATE POLYMERS

IF12.5

2021-05-0145

PREAI

Qimeng Jiang

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