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Yongliang Li

chinese academy of sciences

17H指数
160论文数
1.2K被引数
收录论文 36
发表时间
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Novel Double-Side Cross-Coupled Interconnect of Complementary FET 6T-SRAM for Continuous Area Scaling and Performance Optimization新型双面交叉耦合互补FET 6T-SRAM互连结构，用于持续面积缩放和性能优化
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-04
err0
PREAI
errJie Xu; Lei Cao; Yuzhe Yu; Qingkun Li; Hang Zhang; Xin Wang; Jiaxin Yao; Qingzhu Zhang; Kun Luo; Yongliang Li; Xiaolei Wang; Huaxiang Yin
err分享
err收藏
Four-Level Stacked Si0.7Ge0.3 Channel Gate-All-Around Transistor Using Novel Channel Release and Passivation Technology采用新型沟道释放与钝化技术的四层堆叠Si0.7Ge0.3通道全环绕栅极晶体管
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-06
err0
PREAI
errXiaofeng Jia; Fei Zhao; Kaimin Feng; Shuai Yang; Jiahan Yu; Yihong Lu; Haoyan Liu; Yongliang Li
err分享
err收藏
Non-Traditional Operational Mechanisms of NbOx-Based Threshold Switching Devices Used on On-Chip ESD ProtectionNbOx基阈值开关器件用于片上ESD保护的非传统工作机理
errIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
IF2.3
err2025-12-01
err0
PREAI
errZhang, Jiayi; Li, Xiaojing; Lu, Peng; Yang, Can; Zhang, Dong; Gao, Yuepeng; Liu, Haoyan; Zhao, Fei; Luo, Huaizhi; Li, Yongliang
err分享
err收藏
Effects of trimethylaluminum treatment on the interface properties of HfO2/Si0.7Ge0.3 metal oxide semiconductor capacitors三甲基铝处理对HfO2/Si0.7Ge0.3金属氧化物半导体电容器界面性质的影响
errJournal of Materials Science: Materials in Electronics
IF0
err2025-11-06
err0
PREAI
errYu Zhou; Xiaotong Mao; Kaimin Feng; Haoyan Liu; Jun Luo; Yongliang Li
err分享
err收藏
Electrostatic Discharge Protection Diodes with Stacked SiGe/Si Fin Field-Effect Transistors in Gate-All-Around Technology具有堆叠SiGe/Si鳍式场效应晶体管（Gate-All-Around技术）的静电放电保护二极管
errPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
IF2
err2025-11-01
err0
PREAI
errZhang, Jiayi; Li, Xiaojing; Luo, Huaizhi; Liu, Haoyan; Zhao, Fei; Li, Yongliang
err分享
err收藏
Impact of LaFMD treatment on VFB modulation and defect reduction in SiGe metal-oxide-semiconductor interfaces
errSEMICONDUCTOR SCIENCE AND TECHNOLOGY
IF2.1
err2025-10-31
err0
PREAI
errLi, Yan; Mao, Xiaotong; Luo, Huaizhi; Liu, Haoyan; Zhao, Fei; Li, Yongliang
err分享
err收藏
N-Type Dual Vertical C-Shaped-Channel Nanosheet FETs with Ultra-Thin Channels for High Performance Logic ApplicationN型双垂直C形通道纳米片FETs，具有超薄通道，适用于高性能逻辑应用
errECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
IF2.2
err2025-10-01
err0
errOAAI
errZheng, Yantong; Zhu, Huilong; Zhang, Yongkui; Liu, Wenliang; Wang, Zhicheng; Luo, Tairan; Chen, Xianyu; Wang, Qi; Liu, Jinbiao; Li, Yongliang
err分享
err收藏
A novel H-shaped FET for enhanced CFET performance at advanced technology node一种新型H形FET，用于在先进技术节点提升CFET性能
errMicroelectronic Engineering
IF3.1
err2025-09-27
err0
PREAI
errXin Wang; Haoyan Liu; Longyu Sun; Jiayi Zhang; Xiaofeng Jia; Xiaotong Mao; Huaizhi Luo; Fei Zhao; Yongliang Li
err分享
err收藏
Interface properties improvement of HfO2/Si0.7Ge0.3 gate stacks utilizing a novel BDEAS treatment利用一种新型的BDEAS处理改善HfO2/Si0.7Ge0.3栅堆栈的界面特性
errMaterials Science in Semiconductor Processing
IF4.6
err2025-09-05
err0
PREAI
errKaimin Feng; Xiaotong Mao; Yu Zhou; Shuai Yang; Haoyan Liu; Fei Zhao; Jianfeng Gao; Yongliang Li
err分享
err收藏
Improving electrical performance and reliability of stacked SiGe/Si FinFETs using O3 passivation for I/O devices采用O3钝化技术提升堆叠式SiGe/Si FinFETs的I/O器件的电学性能与可靠性
errMicroelectronic Engineering
IF3.1
err2025-09-04
err0
PREAI
errJiayi Zhang; Huaizhi Luo; Haoyan Liu; Fei Zhao; Yongliang Li
err分享
err收藏
A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement一种具有沟道释放停止层结构的SiGe纳米片晶体管，用于抑制工艺变化和改善电路性能
errIEEE Access
IF3.6
err2025-01-01
err0
errOAAI
errYan Li; Jiayi Zhang; Haoyan Liu; Yongliang Li
err分享
err收藏
Genome-Wide Identification, Classification, Expression Analysis, and Screening of Drought and Heat Resistance-Related Candidates of the Rboh Gene Family in Wheat小麦Rboh基因家族的全基因组鉴定、分类、表达分析及抗旱耐热相关候选基因的筛选
errPLANTS-BASEL
IF4.1
err2024-11-30
err0
errOAAI
errCao, Miyuan; Zhang, Yue; Zou, Xiaoxiao; Yin, Huangping; Yin, Yan; Li, Zeqi; Xiao, Wenjun; Liu, Shucan; Li, Yongliang; Guo, Xinhong
err分享
err收藏
Nonreciprocal thermal metamaterials: Methods and applications
errINTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS
IF7.2
err2024-05-28
err0
PREAI
errXu, Zhengjiao; Liu, Chuanbao; Wang, Xueqian; Li, Yongliang; Bai, Yang
err分享
err收藏
XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface
errRARE METALS
IF11
err2024-05-21
err0
PREAI
errLi, Yan-Ru; Yang, Mei-Yin; Yu, Guo-Qiang; Cui, Bao-Shan; Liu, Jin-Biao; Li, Yong-Liang; Shao, Qi-Ming; Luo, Jun
err分享
err收藏
Stacked SiGe/Si I/O FinFET device preparation in a vertically stacked gate-all-around technology垂直堆叠式栅极全包围技术中的堆叠式SiGe/Si I/O FinFET器件制备
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-09-01
err1
PREAI
errZhao, Fei; Li, Yan; Luo, Huaizhi; Jia, Xiaofeng; Zhang, Jiayi; Mao, Xiaotong; Li, Yongliang
err分享
err收藏
Advanced process and electron device technology
errTSINGHUA SCIENCE AND TECHNOLOGY
IF3.5
err2022-06-01
err2
errOAAI
errZhang, Dan; Su, Xiaojing; Chang, Hao; Xu, Hao; Wang, Xiaolei; He, Xiaobin; Li, Junjie; Zhao, Fei; Yao, Qide; Luo, Yanna; Ma, Xueli; Yang, Hong; Li, Yongliang; Wu, Zhenhua; Su, Yajuan; Yang, Tao; Wei, Yayi; Du, Anyan; Zhu, Huilong; Li, Junfeng; Yin, Huaxiang; Luo, Jun; Ye, Tianchun; Wang, Wenwu
err分享
err收藏
Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
errNANOMATERIALS
IF4.3
err2022-04-05
err2
errOAAI
errMao, Shujuan; Gao, Jianfeng; He, Xiaobin; Liu, Weibing; Liu, Jinbiao; Wang, Guilei; Zhou, Na; Luo, Yanna; Cao, Lei; Zhang, Ran; Liu, Haochen; Li, Xun; Li, Yongliang; Wu, Zhenhua; Li, Junfeng; Luo, Jun; Zhao, Chao; Wang, Wenwu; Yin, Huaxiang
err分享
err收藏
4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process具有新型沟道释放和源极和漏极硅化物工艺的4级垂直堆叠SiGe沟道纳米线栅环绕式晶体管
errNANOMATERIALS
IF4.3
err2022-03-07
err14
errOAAI
errCheng, Xiaohong; Li, Yongliang; Zhao, Fei; Chen, Anlan; Liu, Haoyan; Li, Chun; Zhang, Qingzhu; Yin, Huaxiang; Luo, Jun; Wang, Wenwu
err分享
err收藏
Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2022-03-01
err5
PREAI
errLi, Yongliang; Zan, Ying; Cheng, Xiaohong; Zhao, Fei; Liu, Haoyan; Wang, Wenwu
err分享
err收藏
An in-situ TEM characterization of electron beam induced dislocation motion in a single-crystalline gold thin film单晶金薄膜中电子束诱导位错运动的原位TEM表征
errMATERIALS CHARACTERIZATION
IF5.5
err2022-02-01
err4
PREAI
errXu, Chi; Han, Wentuo; Xue, Wenbin; Li, Yongliang; Li, Song; Li, Bingsheng; Wan, Farong
err分享
err收藏

研究方向

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合作学者
合作期刊
唐波 封面图
唐波 (Bo Tang)
H 指数: 124 · 论文数: 1.7K
李艳 封面图
李艳 (Yan Li)
H 指数: 95 · 论文数: 1.4K
Z
Zhenhua Wu
H 指数: 89 · 论文数: 1.9K
骆
骆清铭 (Qingming Luo)
H 指数: 74 · 论文数: 1.2K
闫
闫江 (Yan Jiang)
H 指数: 70 · 论文数: 701
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