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Yuichi Kurashima

National Institute of Advanced Industrial Science and Technology

H指数:22

被引数:1,368

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Electrical conductance at Ga2O3/Si interfaces fabricated via surface activated bonding

通过表面激活键合制备的Ga₂O₃/Si界面的电导率

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-10-140

OA

Au hollow pyramidal bumps for low-temperature low-pressure bonding fabricated via Au film transfer method

通过金薄膜转移法制备的低温低压键合用Au空心金字塔凸点

sensors and actuators a physical

IF0

2025-08-130

PREAI

Room temperature bonding of Au plating through surface smoothing using polyimide template stripping

使用聚酰亚胺模板剥离通过表面平滑进行Au镀层的室温键合

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2025-03-010

PRE

Low-temperature bonding of HCl-dipped Ge substrate with diamond heat-spreader through atomically thin layer

IF2.9

2025-03-010

PRE

Micropatterning process of diamond substrates by stamping Ni imprint molds

通过压印Ni imprint模具对金刚石基板进行微图案化处理

DIAMOND AND RELATED MATERIALS

IF5.1

2025-02-010

PRE

Ultra-High Vacuum Cells Realized by Miniature Ion Pump Using High-Efficiency Plasma Source

IF3.5

2024-06-200

OAAI

High-Efficiency Plasma Source Using a Magnetic Mirror Trap for Miniature-Ion Pumps

IF3.5

2023-01-163

OAAI

Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging

IF3.5

2022-10-241

OAAI

Room temperature bonding of GaN and diamond substrates via atomic layer

SCRIPTA MATERIALIA

IF5.6

2022-07-0115

PRE

Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging

MICROSYSTEMS & NANOENGINEERING

IF9.9

2022-01-174

OAAI

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

SCIENTIFIC REPORTS

IF3.9

2021-05-279

OAAI

Heterogeneous GaN-Si integration via plasma activation direct bonding

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-01-0113

PREAI

Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions

SCRIPTA MATERIALIA

IF5.6

2021-01-0120

PREAI

Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

APPLIED PHYSICS LETTERS

IF3.6

2020-11-1711

PREAI

Room temperature bonding of aluminum nitride ceramic and semiconductor substrate

氮化铝陶瓷与半导体基板的室温键合

CERAMICS INTERNATIONAL

IF5.6

2020-11-0119

PREAI

Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology

ACTA MATERIALIA

IF9.3

2020-11-0111

OAAI

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

IF3

2020-04-2735

OAAI

Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions

APPLIED PHYSICS LETTERS

IF3.6

2020-04-0971

PREAI

Hydrophilic low-temperature direct bonding of diamond and Si substrates under atmospheric conditions

SCRIPTA MATERIALIA

IF5.6

2020-01-0125

PREAI

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au-Au Bonding Using Ultrathin Au Films

IF3

2019-02-1353

OAAI