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Yuye Kang

National University of Singapore

H指数:18

被引数:975

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Room Temperature Fluorination: A Cost-Effective V_TH Engineering Solution for BEOL Oxide Semiconductor FETs Enabling Inverters With Record Gain of 2687 and High Noise Margin

室温氟化：一种成本效益高的BEOL氧化物半导体FETs的V<sub>TH</sub>工程解决方案，实现了增益记录值为2687的反相器和高噪声容限

IEEE Electron Device Letters

IF4.5

2026-06-030

PRE

BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling

BTI可靠性之IGZTO FETs：氢动力学、AC/DC应力效应与先进建模

IEEE Transactions on Electron Devices

IF3.2

2025-09-260

PRE

Ferroelectric capacitive memories: devices, arrays, and applications

铁电电容存储器：器件、阵列及应用

NANO CONVERGENCE

IF11

2025-01-221

OA

BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures

APPLIED PHYSICS LETTERS

IF3.6

2025-01-210

PRE

BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures

IF9.1

2024-12-200

PRE

High Performance Indium-Tin-Oxide Schottky Diodes for Terahertz Band Operation

IF9.1

2024-06-050

PRE

Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity

IF9.1

2023-12-080

OA

Different tillage and stubble management practices affect root growth and wheat production in a semi-arid area

IF4.1

2023-05-316

PRE

A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm-3

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-10-076

PRE

Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width

具有亚3 nm纳米线宽度的Ge0.95Sn0.05栅极全包围p沟道金属氧化物半导体场效应晶体管

IF9.1

2021-06-0925

PREAI

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band

IF3.3

2019-09-1134

OA