Oliver Hilt

ferdinand-braun-institut, leibniz-institut für höchstfrequenztechnik

31H指数

142论文数

3.4K被引数

收录论文 20

发表时间

Gate Drive Circuit for Noninsulating Gate GaN-Transistors Enabling Fast Switching and High-Frequency Operation 非绝缘栅GaN晶体管的栅极驱动电路，实现快速开关和高频运行

IEEE Open Journal of Industry Applications

IF3.3

2026-02-11

OAAI

Xiaomeng Geng; Carsten Kuring; Benedikt Kohlhepp; Oliver Hilt; Sibylle Dieckerhoff

Vertical GaN Trench MOSFETs With HfO2/Al2O3 Layered Gate Dielectric

IEEE Transactions on Semiconductor Manufacturing

IF2.3

2025-11-01

PREAI

Brusaterra, E.; Bahat Treidel, E.; Paul, P.; Damian Cuallo, M.; Brunner, F.; Ostermay, I.; Hilt, O.

Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiNx passivation layers 通过SiNx钝化层的应力调控有效控制GaN HEMT外延层中的活性界面陷阱

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2025-09-30

PREAI

Chevtchenko, Serguei; Brusaterra, Enrico; Ostermay, Ina; Sudau, Dominik; Hilt, Oliver

Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN-on-GaN HEMTs 寄生导电界面效应对GaN-on-GaN HEMTs直流和射频性能的影响

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-09-01

OAAI

Bassal, Amer; Chevtchenko, Serguei; Schnieder, Frank; Flisgen, Thomas; Bengtsson, Olof; Brunner, Frank; Hilt, Oliver

Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlNSiC Power Transistor Employing Dual-Gate 采用双栅极的单片双向gan-on-alnsic功率晶体管的特性和操作

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2025-04-01

PREAI

Geng, Xiaomeng; Wolf, Mihaela; Kuring, Carsten; Wieczorek, Nick; Hilt, Oliver; Dieckerhoff, Sibylle

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

APPLIED PHYSICS LETTERS

IF3.6

2025-02-11

OAAI

Tetzner, Kornelius; Thies, Andreas; Brusaterra, Enrico; Kuelberg, Alexander; Paul, Pallabi; Ostermay, Ina; Wuerfl, Joachim; Hilt, Oliver

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration 关于单片集成的gan-on-aln/SiC晶体管的实验研究

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-10-01

PREAI

Geng, Xiaomeng; Wieczorek, Nick; Wolf, Mihaela; Kuring, Carsten; Brunner, Frank; Wuerfl, Joachim; Hilt, Oliver; Dieckerhoff, Sibylle

GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate 集成在高压AlN陶瓷衬底上的GaN基多芯片半桥功率模块

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-10-01

PREAI

Kuring, Carsten; Wolf, Mihaela; Geng, Xiaomeng; Hilt, Oliver; Bocker, Jan; Wurfl, Joachim; Dieckerhoff, Sibylle

Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-03-01

PREAI

Treidel, E. Bahat; Hilt, O.; Wolf, M.; Schellhase, L.; Thies, A.; Wuerfl, J.

Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2016-11-01

PREAI

Badawi, Nasser; Hilt, Oliver; Bahat-Treidel, Eldad; Boecker, Jan; Wuerfl, Joachim; Dieckerhoff, Sibylle

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2015-11-11

PREAI

Tapajna, M.; Hilt, O.; Bahat-Treidel, E.; Wuerfl, J.; Kuzmik, J.

High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS BULLETIN

IF4.9

2015-05-08

PREAI

Hilt, Oliver; Bahat-Treidel, Eldad; Knauer, Arne; Brunner, Frank; Zhytnytska, Rimma; Wuerfl, Joachim

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-04-03

PREAI

Marko, P.; Alexewicz, A.; Hilt, O.; Meneghesso, G.; Zanoni, E.; Wuerfl, J.; Strasser, G.; Pogany, D.

Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces

APPLIED SURFACE SCIENCE

IF6.9

2010-01-01

PREAI

Sohal, Rakesh; Dudek, Piotr; Hilt, Oliver

Passivation of TiO2 by ultra-thin Al-oxide

APPLIED SURFACE SCIENCE

IF6.9

2005-02-01

PREAI

Dittrich, T; Muffler, HJ; Vogel, M; Gurninskaya, T; Ogacho, A; Belaidi, A; Strub, E; Bohne, W; Röhrich, J; Hilt, O; Lux-Steiner, MC

Unusual carrier dynamics in disordered quasi-1D systems: not so unusual

SYNTHETIC METALS

IF4.6

2001-03-01

PREAI

Martens, HCF; Hilt, O; Brom, HB; de Leeuw, DM; Menon, R

Localised and delocalized charge transport in single-wall carbon-nanotube mats

PHYSICAL REVIEW B

IF3.7

2000-02-15

OAAI

Hilt, O; Brom, HB; Ahlskog, M

Frequency dependent conductivity of agglomorated spheres having a conducting surface

SYNTHETIC METALS

IF4.6

1999-06-01

PREAI

Hilt, O; Martens, HCF; Reedijk, JA; Brom, H; Janssen, PJP

Charge transport in doped polythiophene

SYNTHETIC METALS

IF4.6

1999-05-01

PREAI

Reedijk, JA; Martens, HCF; van Bohemen, SMC; Hilt, O; Brom, HB; Michels, MAJ

4 A/300 V Switching of Lateral β-Ga₂O₃ MOSFET Devices 4 侧向β-Ga₂O₃ MOSFET器件的300 V开关特性

IEEE Electron Device Letters

IF4.5

PREAI

Kornelius Tetzner; Houssam Halhoul; Martin Damian Cuallo; Oliver Hilt

研究方向