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Akshay Sahota

University of Texas Dallas

H指数:6

被引数:128

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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors

在低温 (400 °C) 处理的基于Hf0.5Zr0.5O2的金属-铁电-金属电容器中，由压印现象引起的弛豫

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-02-148

PRE

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-04-059

PREAI

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2Thin Films

IF3.2

2020-07-0235

OAAI

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2020-01-017

PREAI