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H
Hagyoul Bae
jeonbuk national university
28
H指数
154
论文数
2.2K
被引数
0
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58
发表时间
发表时间
IF
被引数
Discovery of Energy-Localized Trap States via Opto-Electrical Spectroscopy in UWBG Perovskite La:SrSnO
3
FETs
通过光电器谱学在UWBG钙钛矿La:SrSnO
3
FETs中发现能量局域的陷阱态
Advanced Functional Materials
IF
19
2026-09-07
0
OA
AI
Sojin Jung; Junghyun Koo; Hongseung Lee; Donghwan Kim; Dongho Won; Weideng Sun; Jaewook Yoo; Minah Park; Seohyeon Park; Seongbin Lim; Joonsung Lee; Sungjune Park; Sangmoon Yoon; Tae Wan Kim; Bharat Jalan; Gang Qiu; Kiyoung Lee; Hagyoul Bae
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Performance Enhancement of Tin Chloride-Incorporated Ferroelectric Polymer-Based Artificial Synapse for Hardware Neural Networks (Adv. Funct. Mater. 68/2026)
氯化锡掺杂的铁电聚合物基人工突触在硬件神经网络中的性能提升 (Adv. Funct. Mater. 68/2026)
Advanced Functional Materials
IF
19
2026-09-07
0
OA
AI
Hyun-Soo Kim; Hyunkyu Lee; Yeonho Choi; Won Young Jang; Hyungmin Kim; Krishna Moorthy Ponnusamy; Hongseung Lee; Jaewook Yoo; Ji Ye Lee; S. Chandramohan; Seongin Hong; Hagyoul Bae; Hyeon-Sik Jang; Sang Yeol Lee; Keun Heo
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Sustainable Synaptic Device with Two-Dimensional Ferroelectric Materials for Neuromorphic Computing (Adv. Sci. 40/2026)
用于神经形态计算的二维铁电材料可持续突触器件 (Adv. Sci. 40/2026)
Advanced Science
IF
14.1
2026-07-28
0
OA
AI
Jaewook Yoo; Seokjin Oh; Minah Park; Jong Min Song; Hongseung Lee; Seohyeon Park; Sojin Jung; Seongbin Lim; Soohyun Lim; Dongsun Shin; Ji Won Heo; TaeWan Kim; Hagyoul Bae
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Performance Enhancement of Tin Chloride-Incorporated Ferroelectric Polymer-Based Artificial Synapse for Hardware Neural Networks
掺氯化锡的铁电聚合物基人工突触在硬件神经网络中的性能提升
Advanced Functional Materials
IF
19
2026-07-27
0
OA
AI
Hyun-Soo Kim; Hyunkyu Lee; Yeonho Choi; Won Young Jang; Hyungmin Kim; Krishna Moorthy Ponnusamy; Hongseung Lee; Jaewook Yoo; Ji Ye Lee; S. Chandramohan; Seongin Hong; Hagyoul Bae; Hyeon-Sik Jang; Sang Yeol Lee; Keun Heo
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Exploring Spatial Distribution of Intrinsic Oxide Trap by Decoupling Channel Thickness Effects in Amorphous IGZO TFTs
探索通过解耦沟道厚度效应来研究非晶IGZO TFTs中固有氧化物陷阱的空间分布
ACS Applied Materials & Interfaces
IF
0
2026-06-11
0
PRE
AI
Donghyeon Lee; Jaewook Yoo; Hongseung Lee; Sung Min Jung; Seongbin Lim; Sojin Jung; Seohyeon Park; Minah Park; Dongsun Shin; Sieun Lee; Soohyun Lim; Junhui Park; TaeWan Kim; Kiyoung Lee; Hagyoul Bae
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Nonlinear Asymmetric Parasitic Resistance Extraction of Vertical Pillar-Type FET Using Physics-Informed Artificial Neural Network
基于物理信息人工神经网络的垂直柱状FET非线性不对称寄生电阻提取
IEEE Electron Device Letters
IF
4.5
2026-06-11
0
PRE
AI
Jaewook Yoo; Hongseung Lee; Sojin Jung; Seongbin Lim; Soohyun Lim; Donghyeon Lee; Dongsun Shin; Junhui Park; Sieun Lee; Yang-Kyu Choi; Hagyoul Bae
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Emergence of unconventional ferroelectric phase in ultrathin Hf0.5Zr0.5O2 films
超薄Hf0.5Zr0.5O2薄膜中非常规铁电相的出现
Science Advances
IF
12.5
2026-05-20
0
OA
AI
Sangjun Lee; Hyangsook Lee; Hyun Hwi Lee; Han-Koo Lee; Jung-Hwa Kim; Seontae Park; Hyun Jae Lee; Hagyoul Bae; Sanghyun Jo; Musarrat Hasan; Yongho Ha; Bong Jin Kuh; Jinseong Heo; Duk-Hyun Choe; Eunha Lee
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Reconfigurable Adaptive Synapse and Logic Device by Ambipolar Ferroelectric Semiconductor
双极性铁电半导体实现的重组自适应突触与逻辑器件
Small
IF
12.1
2026-05-08
0
PRE
AI
Jaewook Yoo; Minah Park; Seokjin Oh; Soyeon Kim; Hongseung Lee; Sojin Jung; Seohyeon Park; Seongbin Lim; Jong Min Song; Ji Won Heo; Gyeong Deok Seo; Kiyoung Lee; Sangmoon Yoon; TaeWan Kim; Hagyoul Bae
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Micropatterned Polydimethylsiloxane Triboelectric Nanogenerator: A Novel Method for Morse Code Generation and Wireless Communication
微图案聚二甲基硅氧烷摩擦纳米发电机:莫尔斯电码生成和无线通信的一种新方法
ACS Applied Materials & Interfaces
IF
0
2026-05-08
0
OA
AI
Bhishma Pandit; Jin Taek Lee; Hyun-Soo Kim; Jungwoo Bong; Won Young Jang; Seokgyu Lee; Seongmin Jin; Hyungmin Kim; Yeonho Choi; Janghyeon Kim; Donggu Im; Hagyoul Bae; Hyeon-Sik Jang; Seung-Bae Jeon; Keun Heo
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Sustainable Synaptic Device with Two-Dimensional Ferroelectric Materials for Neuromorphic Computing
基于二维铁电材料的可持续神经形态计算突触器件
Advanced Science
IF
14.1
2026-05-07
0
OA
AI
Jaewook Yoo; Seokjin Oh; Minah Park; Jong Min Song; Hongseung Lee; Seohyeon Park; Sojin Jung; Seongbin Lim; Soohyun Lim; Dongsun Shin; Ji Won Heo; TaeWan Kim; Hagyoul Bae
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Demonstration of High-Performance Ultra-Wide Bandgap SrSnO
3
Top-Gated MOSFETs
高性能超宽禁带SrSnO
3
顶栅MOSFET的演示
IEEE Electron Device Letters
IF
4.5
2026-04-30
0
PRE
AI
Junghyun Koo; Weideng Sun; Donghwan Kim; Hongseung Lee; Chengyu Zhu; Kiyoung Lee; Hagyoul Bae; Bharat Jalan; Gang Qiu
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Plasma Knowledge-Based Polymorphic Engineering for Two-Dimensional Semiconductor Contacts
基于等离子体知识的二维半导体接触多形性工程
ACS Nano
IF
16
2026-02-11
0
PRE
AI
Ji Won Heo; Gwang-Seok Chae; Gyeong Deok Seo; Dong Hyun Seo; Gi Dan Shim; Han-Woong Choi; Jin-Hoo Seong; Jae-Heon Lee; Hagyoul Bae; Sungjune Park; Hyo-Chang Lee; TaeWan Kim
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High-κ Capping Layer Effects on Carrier Polarity and Reliability of SWNT Field Effect Transistors With Spin-on-Glass Buffer Layer
高-κ盖帽层对带旋涂玻璃缓冲层的单壁碳纳米管场效应晶体管中载流子极性和可靠性的影响
IEEE Transactions on Electron Devices
IF
3.2
2026-02-10
0
PRE
AI
Yun Sung Lee; Seohyeon Park; Hyeon Bin Jo; Han Min Kim; Hagyoul Bae; Sung Hun Jin
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Enhanced Dielectric Constant by Al Gradient Doping on Atomic-Layer-Deposited HfO2-Based Metal–Insulator–Metal Capacitor
通过Al梯度掺杂在原子层沉积的HfO2基金属-绝缘体-金属电容器中增强介电常数
Advanced Electronic Materials
IF
5.3
2026-01-16
0
OA
AI
Taelim Lee; Jungwoo Bong; Hyunjin Lee; Ho-Sung Lee; Hyeon-Sik Jang; Hee-Tae Kim; Jae-Hyun Lee; Byung Jin Cho; Yeon-Ho Choi; Hagyoul Bae; Taehwan Moon; Keun Heo
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Comparative analysis of charge-trap sensitivity and stability in MoTe2 and WS2 field -effect transistors
MoTe2和WS2场效应晶体管中电荷捕获灵敏度和稳定性的比较分析
Physica Scripta
IF
2.6
2025-12-04
0
PRE
AI
Gi Dan Shim; Ji Won Heo; Jaewook Yoo; Hagyoul Bae; TaeWan Kim
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High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
高性能超宽禁带CaSnO3金属氧化物半导体场效应晶体管
Advanced Electronic Materials
IF
5.3
2025-10-16
0
OA
AI
Weideng Sun; Junghyun Koo; Donghwan Kim; Hongseung Lee; Rishi Raj; Chengyu Zhu; Kiyoung Lee; Andre Mkhoyan; Hagyoul Bae; Bharat Jalan; Gang Qiu
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Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application
基于HZO/β-Ga2O3 3D FinFET的高感知度突触器件应用的增强型电学性能
Materials Science in Semiconductor Processing
IF
4.6
2025-10-01
0
PRE
AI
Seohyeon Park; Jaewook Yoo; Seokjin Oh; Hongseung Lee; Minah Park; Seongbin Lim; Soyeon Kim; Sojin Jung; Bongjoong Kim; Keun Heo; Taehwan Moon; TaeWan Kim; Mengwei Si; Peide D. Ye; Hagyoul Bae
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Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors
中子辐照诱导的陷阱态和ReS2场效应晶体管中的电性能下降
ELECTRONIC MATERIALS LETTERS
IF
2.6
2025-10-01
0
PRE
AI
Back, Seung Yong; Seo, Gyeong Deok; Heo, Ji Won; Bae, Hagyoul; Jung, Bong-ki; Kim, Taewan
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Enhanced anodic charge storage in asymmetric hybrid supercapacitor featuring dione–diimide-based electron deficient conjugated polymers
具有二酮–二亚胺基电子缺电子共轭聚合物的非对称混合超级电容器中阳极电荷存储的增强
J. Mater. Chem. A
IF
9.5
2025-07-30
0
PRE
AI
Dhananjaya Patra; Subir K. Pati; Sunita Muduli; Sabyashachi Mishra; Geon-Hong Kim; Hagyoul Bae; TaeWan Kim; Sungjune Park
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Correction to “Subthermionic Steep-Slope MoS2/MoO3/MoS2 Tunneling Field-Effect Transistor with Extremely Low Off-state Current Level”
“Subthermionic Steep-Slope MoS2/MoO3/MoS2 隧道场效应晶体管的修正:极端低关态电流水平”
ACS Applied Electronic Materials
IF
4.7
2025-07-25
0
PRE
AI
Dong Hyun Seo; Ji Won Heo; Jong Min Song; Hagyoul Bae; TaeWan Kim
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研究方向
暂无研究方向
合作学者
合作期刊
K
Ki‐Hyun Kim
H 指数: 146 · 论文数: 2.1K
王海燕
(Haiyan Wang)
H 指数: 102 · 论文数: 1.7K
C
Cheol Seong Hwang
H 指数: 96 · 论文数: 971
S
Sang Ouk Kim
H 指数: 92 · 论文数: 447
M
M. Meyyappan
H 指数: 92 · 论文数: 846
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