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Tianchun Ye

chinese academy of sciences

28H指数
606论文数
3.9K被引数
收录论文 84
发表时间
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A 950 °C-Thermal-Budget-Compatible Al2O3-Embedded Hf0.5Zr0.5O2 Poly-Si Channel- Last FeFET for 3-D NAND Applications950 °C-热预算兼容的Al2O3-嵌入Hf0.5Zr0.5O2多晶硅通道-后FeFET用于3-D NAND应用
errIEEE Transactions on Electron Devices
IF3.2
err2026-09-07
err0
PREAI
errWenbo Fan; Xiaoyu Ke; Yajing Ding; Xianzhou Shao; Saifei Dai; Tao Hu; Runhao Han; Min Liao; Xinpei Jia; Fengbin Tian; Tingting Li; Bo Tang; Junshuai Chai; Hao Xu; Qing Luo; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
High-Performance P-Channel FDSOI MOSFETs via Modified Silicide-as-Diffusion-Source-Induced Dopant Segregation (M-SADS)通过改进的硅化物-扩散源诱导掺杂剂分凝（M-SADS）实现高性能P沟道FDSOI MOSFETs
errIEEE Electron Device Letters
IF4.5
err2026-09-02
err0
PREAI
errBinbin Xu; Jing Xu; Keyou Tong; Wenjun Zhang; Jianfeng Gao; Xiaolei Wang; Tianchun Ye; Jun Luo
err分享
err收藏
Enhancing HfO2-Based Si Channel FeFET Retention by Tunneling Barrier Engineering: Inserting Al2O3 Layers to Increase Tunneling Barrier通过隧穿势垒工程增强HfO2基Si沟道FeFET的存储保持性：插入Al2O3层以提高隧穿势垒
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-05
err0
PREAI
errZeqi Chen; Tao Hu; Xinpei Jia; Ruoyao Ji; Runhao Han; Mingkai Bai; Yuejia Zhou; Runteng Zhu; Xiaoqing Sun; Xiaoyu Ke; Junshuai Chai; Hao Xu; Kai Han; Kechao Tang; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
Unveiling Retention Loss Mechanism in FeFETs With Gate-Side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization通过解耦捕获电荷和铁电极化揭示具有栅侧中间层的FeFETs中的保持损失机制
errIEEE Transactions on Electron Devices
IF3.2
err2026-05-12
err0
PREAI
errRunhao Han; Tao Hu; Jia Yang; Saifei Dai; Yajing Ding; Mingkai Bai; Xianzhou Shao; Junshuai Chai; Hao Xu; Qing Luo; Wenwu Wang; Tianchun Ye; Xiaolei Wang
err分享
err收藏
Flat-Band Voltage Tuning and Interface Improvement via La Based Pre-Treatment and Post-Metallization/Deposition Annealing通过La基预处理和后金属化/沉积退火进行平带电压调控与界面改善
errECS Journal of Solid State Science and Technology
IF2.2
err2026-05-01
err0
PREAI
errFan, Zeyu; Zhang, Wenjun; Xu, Binbin; Tong, Keyou; Liu, Yu; Liu, Jianhong; Ji, Xiaoxue; Xu, Jing; Luo, Jun; Ye, Tianchun
err分享
err收藏
Interlayer Co-Design Enabling a Large Memory Window and Robust Reliability in Ferroelectric Vertical Gate-All-Around FETs层间协同设计实现铁电垂直环绕栅FinFET的大内存窗口和可靠鲁棒性
errIEEE Electron Device Letters
IF4.5
err2026-03-04
err0
PREAI
errRunhao Han; Junshuai Chai; Tao Hu; Jia Yang; Tairan Luo; Xianzhou Shao; Min Liao; Xiaoqing Sun; Yong Du; Wenliang Liu; Kai Han; Hao Xu; Qing Luo; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications用于低功耗应用的背栅和前栅绝缘体上锗晶体管的制备与表征
errElectronics 2025, Vol. 14, Page 4646
IF2.6
err2025-11-27
err0
errOAAI
errYuhui Ren; Jiale Su; Jiahan Ke; Hongxiao Lin; Ben Li; Zhenzhen Kong; Yiwen Zhang; Junhao Du; Renrong Liang; Jun Xu; Xiangliang Duan; Tianyu Dong; Xueyin Su; Tianchun Ye; Xuewei Zhao; Yuanhao Miao; Henry H. Radamson
err分享
err收藏
POFGSP: Priority-Based Out-of-Order Scheduling and Fine-Grain Status Polling for SSD Performance Improvement
errIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
IF2.9
err2025-10-01
err0
PREAI
errWu, Wentian; Li, Qianhui; Qu, Tong; Wang, Qi; Huo, Zongliang; Ye, Tianchun
err分享
err收藏
High-responsivity GOI PIN photodetectors with periodic SiO2/Si DBR structures for SWIR imaging application高响应度GOI PIN光电探测器，带有周期性SiO2/Si DBR结构，用于SWIR成像应用
errmaterials science materials in electronics
IF0
err2025-08-25
err0
PREAI
errJiahan Yu; Xuewei Zhao; Libin Liu; Jiale Su; Junhao Du; Hongxiao Lin; Yuanhao Miao; Tianchun Ye; Henry H. Radamson
err分享
err收藏
Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET With SiO2/HfO2/SiO2 Gate Side Interlayer研究硅通道Hf0.5Zr0.5O2 FeFET中电荷捕获行为并增强其记忆窗口，通过SiO2/HfO2/SiO2栅侧中间层。
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errRunhao Han; Jia Yang; Tao Hu; Mingkai Bai; Yajing Ding; Xianzhou Shao; Xinpei Jia; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu; Kai Han; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET栅长对结less FDSOI应变SiGe沟道p-FinFET电学特性的影响
errJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
IF2.8
err2025-05-24
err0
PREAI
errLin, Hongxiao; Miao, Yuanhao; Ren, Yuhui; Zhang, Yongkui; Zhang, Qingzhu; Xiong, Wenjuan; Yu, Jiahan; Zhao, Xuewei; Liang, Renrong; Xu, Jun; Ye, Tianchun; Radamson, Henry H.
err分享
err收藏
The Planar Core-Shell Junctionless MOSFET平面核壳结自由MOSFET
errMICROMACHINES
IF3
err2025-03-31
err0
errOAAI
errDou, Cunhua; Song, Weijia; Yan, Yu; Zhang, Xuan; Tang, Zhiyu; Zhao, Xing; Liu, Fanyu; Xue, Shujian; Sun, Huabin; Wan, Jing; Li, Binhong; Wang, Yun; Ye, Tianchun; Xu, Yong; Cristoloveanu, Sorin
err分享
err收藏
Natural Ellagic Acid-Polyphenol Sandwich Biscuit Self-Assembled Solubilizing System for Formation Mechanism and Antibacterial Synergia天然鞣花酸-多酚三明治饼干自组装增溶系统的形成机制与抗菌协同作用
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-25
err0
PREAI
errGe, CL; Wei, XR; Xu, YB; Jiang, YR; Yang, X; Lin, JZ; Li, MQ; Tian, Y; Fan, SH; Ye, T; Han, L; Huang, HZ; Zhang, DK
err分享
err收藏
NV-APP: Invalid Programming Performance Improved No-Verify and Adaptive Pulse Programming Scheme for 3-D QLC nand FlashNV-APP: 针对三维QLC nand Flash的无效编程性能改进方案，包括无验证和自适应脉冲编程策略
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-01-01
err0
PREAI
errQianqi Zhao; Jing He; Tong Qu; Wentian Wu; Qianhui Li; Qi Wang; Zongliang Huo; Tianchun Ye
err分享
err收藏
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process ConditionsSiGe/Si多层结构的界面研究: 不同外延工艺条件的影响
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-11-21
err0
PREAI
errKong, Zhenzhen; Song, Yanpeng; Wang, Hailing; Liu, Xiaomeng; Wang, Xiangsheng; Liu, Jinbiao; Li, Ben; Su, Jiale; Tan, Xinguang; Luan, Qingjie; Lin, Hongxiao; Ren, Yuhui; Zhang, Yiwen; Liu, Jingxiong; Li, Junfeng; Du, Anyan; Radamson, Henry H.; Zhao, Chao; Ye, Tianchun; Wang, Guilei
err分享
err收藏
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance锗垂直栅极全包围场效应晶体管的演示，其特征是具有创纪录的高性能的自对准高 κ 金属栅极
errACS NANO
IF16
err2023-10-12
err5
PREAI
errXie, Lu; Zhu, Huilong; Zhang, Yongkui; Ai, Xuezheng; Li, Junjie; Wang, Guilei; Liu, Jinbiao; Du, Anyan; Yang, Hong; Yin, Xiaogen; Huang, Weixing; Li, Chen; Li, Yangyang; Wang, Qi; Lu, Shunshun; Kong, Zhenzhen; Xiang, Jinjuan; Du, Yong; Luo, Jun; Li, Junfeng; Radamson, Henry H.; Wang, Wenwu; Ye, Tianchun
err分享
err收藏
Three-dimensional plasmonic lithography imaging modeling based on the RCWA algorithm for computational lithography
errOPTICS EXPRESS
IF3.3
err2023-10-12
err2
errOAAI
errDing, Huwen; Fan, Taian; Zhang, Libin; Wei, Yayi; Ye, Tianchun
err分享
err收藏
Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-05-11
err11
PREAI
errKong, Zhenzhen; Li, Zonghu; Cao, Gang; Su, Jiale; Zhang, Yiwen; Liu, Jinbiao; Liu, Jingxiong; Ren, Yuhui; Li, Huihui; Wei, Laiming; Guo, Guo-ping; Wu, Yuanyuan; Radamson, Henry H.; Li, Junfeng; Wu, Zhenhua; Li, Hai-ou; Yang, Jiecheng; Zhao, Chao; Ye, Tianchun; Wang, Guilei
err分享
err收藏
Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate
errNANOMATERIALS
IF4.3
err2023-05-06
err4
errOAAI
errLi, Shuai; Luo, Jun; Ye, Tianchun
err分享
err收藏
Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation
errMICROSYSTEMS & NANOENGINEERING
IF9.9
err2023-03-30
err6
errOAAI
errHan, Dandan; Deng, Sen; Ye, Tianchun; Wei, Yayi
err分享
err收藏

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唐波 封面图
唐波 (Bo Tang)
H 指数: 124 · 论文数: 1.7K
陈
陈宸 (Chen Chen)
H 指数: 108 · 论文数: 3.9K
Z
Zhenhua Wu
H 指数: 89 · 论文数: 1.9K
刘琦 封面图
刘琦 (Qi Liu)
H 指数: 88 · 论文数: 807
张静 封面图
张静 (Jing Zhang)
H 指数: 84 · 论文数: 555
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