Karl D. Hobart - Publications, H-index & Citations

Karl D. Hobart

university of alabama tuscaloosa

42H指数

441论文数

6.4K被引数

收录论文 58

发表时间

Epitaxial Cr2MnO4 p-n heterojunction to (201) β-Ga2O3 deposited via off-axis magnetron sputtering 外延Cr₂MnO₄ p-n异质结与通过偏轴磁控溅射沉积的(201) β-Ga₂O₃

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-12-07

PREAI

Akintunde, Babajide; Derksen, Naomi; Imran, Ashik; Gallagher, James C.; Tadjer, Marko J.; Gutierrez, Audrey Rose; Hall, Merlin J.; Orent, Jared T.; Rimal, Gaurab; Kayani, Asghar N.; Pennachio, Daniel J.; Dey, Koushik; Wang, Xin; Gann, Katie R.; Hobart, Karl D.; Mastro, Michael A.; Hauser, Adam J.

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10⁴

IEEE Electron Device Letters

IF4.5

2025-11-25

PREAI

James Spencer Lundh; Brianna A. Klein; Andrew A. Allerman; Andrew J. Cantrell; Alfred Zhao; Daniel J. Pennachio; GlenAsia Gonzalez; Eric Cruz; Tolen M. Nelson; Geoffrey M. Foster; Alan G. Jacobs; Andrew D. Koehler; Marko J. Tadjer; Giovanni Esteves; Roy H. Olsson; Andrew M. Armstrong; Karl D. Hobart; Michael A. Mastro

Selective Thermal Mapping of Wide and Ultrawide Band Gap Semiconductor Devices Using Mechanically Exfoliated MoS2 Flakes 利用机械剥离的MoS2薄片对宽带隙和超宽带隙半导体器件进行选择性热成像

ACS Applied Electronic Materials

IF4.7

2025-07-14

PREAI

James Spencer Lundh; Hsun-Jen Chuang; Cory D. Cress; Alan G. Jacobs; Berend T. Jonker; Travis J. Anderson; Karl D. Hobart; Michael A. Mastro; Marko J. Tadjer

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-22

OAAI

Aller, Henry T.; Pfeifer, Thomas W.; Mamun, Abdullah; Huynh, Kenny; Tadjer, Marko; Feygelson, Tatyana; Hobart, Karl; Anderson, Travis; Pate, Bradford; Jacobs, Alan; Lundh, James Spencer; Goorsky, Mark; Khan, Asif; Hopkins, Patrick; Graham, Samuel

Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

APPLIED PHYSICS LETTERS

IF3.6

2024-04-10

OAAI

Masten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

SCIENTIFIC REPORTS

IF3.9

2024-03-28

OAAI

Gallagher, James C.; Mastro, Michael A.; Jacobs, Alan G.; Kaplar, Robert. J.; Hobart, Karl D.; Anderson, Travis J.

Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

APPLIED PHYSICS LETTERS

IF3.6

2024-01-31

PREAI

Lundh, James Spencer; Pavlidis, Georges; Sasaki, Kohei; Centrone, Andrea; Spencer, Joseph A.; Masten, Hannah N.; Currie, Marc; Jacobs, Alan G.; Konishi, Keita; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Experimental determination of critical thickness limitations of (010) β-(AlxGa1-x)2O3 heteroepitaxial films

APPLIED PHYSICS LETTERS

IF3.6

2023-11-27

PREAI

Lundh, James Spencer; Huynh, Kenny; Liao, Michael; Olsen, William; Pan, Kaicheng; Sasaki, Kohei; Konishi, Keita; Masten, Hannah N.; Hite, Jennifer K.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Goorsky, Mark; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Using machine learning with optical profilometry for GaN wafer screening

SCIENTIFIC REPORTS

IF3.9

2023-02-27

OAAI

Gallagher, James C.; Mastro, Michael A.; Ebrish, Mona A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

APPLIED PHYSICS LETTERS

IF3.6

2022-11-07

OAAI

Spencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D.

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

SCIENTIFIC REPORTS

IF3.9

2022-01-13

OAAI

Gallagher, James C.; Ebrish, Mona A.; Porter, Matthew A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Experimental observation of localized interfacial phonon modes

NATURE COMMUNICATIONS

IF15.7

2021-11-25

OAAI

Cheng, Zhe; Li, Ruiyang; Yan, Xingxu; Jernigan, Glenn; Shi, Jingjing; Liao, Michael E.; Hines, Nicholas J.; Gadre, Chaitanya A.; Idrobo, Juan Carlos; Lee, Eungkyu; Hobart, Karl D.; Goorsky, Mark S.; Pan, Xiaoqing; Luo, Tengfei; Graham, Samuel

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-28

PREAI

Tadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R.

Structural transition and recovery of Ge implanted β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2020-10-13

OAAI

Anber, Elaf A.; Foley, Daniel; Lang, Andrew C.; Nathaniel, James; Hart, James L.; Tadjer, Marko J.; Hobart, Karl D.; Pearton, Stephen; Taheri, Mitra L.

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

APPLIED PHYSICS LETTERS

IF3.6

2020-08-28

OAAI

Foster, Geoffrey M.; Koehler, Andrew; Ebrish, Mona; Gallagher, James; Anderson, Travis; Noesges, Brenton; Brillson, Leonard; Gunning, Brendan; Hobart, Karl D.; Kub, Francis

Room-temperature skyrmions in strain-engineered FeGe thin films 应变工程FeGe薄膜中的室温skyrmii

PHYSICAL REVIEW B

IF3.7

2020-06-08

PREAI

Budhathoki, Sujan; Sapkota, Arjun; Law, Ka Ming; Ranjit, Smriti; Nepal, Bhuwan; Hoskins, Brian D.; Thind, Arashdeep Singh; Borisevich, Albina Y.; Jamer, Michelle E.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Stephen, Gregory M.; Heiman, Don; Mewes, Tim; Mishra, Rohan; Gallagher, James C.; Hauser, Adam J.

Integration of polycrystalline Ga2O3 on diamond for thermal management

APPLIED PHYSICS LETTERS

IF3.6

2020-02-12

OAAI

Cheng, Zhe; Wheeler, Virginia D.; Bai, Tingyu; Shi, Jingjing; Tadjer, Marko J.; Feygelson, Tatyana; Hobart, Karl D.; Goorsky, Mark S.; Graham, Samuel

Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-SiC epitaxial films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Hobart, KD; Kub, FJ; Fatemi, M; Taylor, C; Eshun, E; Spencer, MG

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-05-01

OAAI

Cheng, Zhe; Bai, Tingyu; Shi, Jingling; Feng, Tianli; Wang, Yekan; Mecklenburg, Matthew; Li, Chao; Hobart, Karl D.; Feygelson, Tatyana I.; Tadjer, Marko J.; Pate, Bradford B.; Foley, Brian M.; Yates, Luke; Pantelides, Sokrates T.; Cola, Baratunde A.; Goorsky, Mark; Graham, Samuel

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

APL MATERIALS

IF4.5

2019-03-29

117

OAAI

Cheng, Zhe; Yates, Luke; Shi, Jingjing; Tadjer, Marko J.; Hobart, Karl D.; Graham, Samuel

研究方向