Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >104IEEE Electron Device LettersIF4.52025-11-250PRE
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatmentsAPPLIED PHYSICS LETTERSIF3.62020-08-2820OAAI
Room-temperature skyrmions in strain-engineered FeGe thin films应变工程FeGe薄膜中的室温skyrmiiPHYSICAL REVIEW BIF3.72020-06-0822PREAI
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer DepositionCHEMISTRY OF MATERIALSIF72020-01-1368PREAI
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogenAPPLIED PHYSICS LETTERSIF3.62018-11-0631PREAI
Electrical characterization of ALD HfO2 high-k dielectrics on ((2)over-bar01) β-Ga2O3APPLIED PHYSICS LETTERSIF3.62018-01-2562OAAI
Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layerAPPLIED PHYSICS LETTERSIF3.62017-01-067PREAI
Nanomechanical Analysis of Polydimethylglutarimide Based Lift Off Resist used for Temporary Bonding and Film TransfersSEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14IF02016-08-240PREAI
A Scalable Clean Graphene Transfer Process Using Polymethylglutarimide as a Support ScaffoldJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32016-03-1123OAAI
Degradation mechanisms of 2MeV proton irradiated AlGaN/GaN HEMTsAPPLIED PHYSICS LETTERSIF3.62015-08-2640OAAI
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic processAPPLIED PHYSICS LETTERSIF3.62014-06-0337PREAI
Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiCAPPLIED PHYSICS LETTERSIF3.62014-02-198OAAI
Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanismsAPPLIED PHYSICS LETTERSIF3.62008-12-164PREAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向