Travis J. Anderson - Publications, H-index & Citations

Travis J. Anderson

University of Florida

39H指数

383论文数

5.8K被引数

收录论文 40

发表时间

Selective Thermal Mapping of Wide and Ultrawide Band Gap Semiconductor Devices Using Mechanically Exfoliated MoS2 Flakes 利用机械剥离的MoS2薄片对宽带隙和超宽带隙半导体器件进行选择性热成像

ACS Applied Electronic Materials

IF4.7

2025-07-14

PREAI

James Spencer Lundh; Hsun-Jen Chuang; Cory D. Cress; Alan G. Jacobs; Berend T. Jonker; Travis J. Anderson; Karl D. Hobart; Michael A. Mastro; Marko J. Tadjer

Structural and optical properties of cubic GaN films on high-thermal conductivity substrates 立方GaN薄膜在高温导热衬底上的结构和光学特性

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-01-15

OAAI

Freitas Jr, Jaime A.; Culbertson, James C.; Storm, David F.; Mahadik, Nadeemullah A.; Nepal, Neeraj; Anderson, Travis J.

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-22

OAAI

Aller, Henry T.; Pfeifer, Thomas W.; Mamun, Abdullah; Huynh, Kenny; Tadjer, Marko; Feygelson, Tatyana; Hobart, Karl; Anderson, Travis; Pate, Bradford; Jacobs, Alan; Lundh, James Spencer; Goorsky, Mark; Khan, Asif; Hopkins, Patrick; Graham, Samuel

Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

APPLIED PHYSICS LETTERS

IF3.6

2024-04-10

OAAI

Masten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

SCIENTIFIC REPORTS

IF3.9

2024-03-28

OAAI

Gallagher, James C.; Mastro, Michael A.; Jacobs, Alan G.; Kaplar, Robert. J.; Hobart, Karl D.; Anderson, Travis J.

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

APPLIED PHYSICS LETTERS

IF3.6

2024-03-25

OAAI

Senarath, A. S.; Islam, S.; Sengupta, A.; McCurdy, M. W.; Anderson, T.; Jacobs, A.; Kaplar, R.; Ball, D. R.; Zhang, E. X.; Pantelides, S. T.; Reed, R. A.; Ebrish, M. A.; Fleetwood, D. M.; Caldwell, J. D.; Schrimpf, R. D.

Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

APPLIED PHYSICS LETTERS

IF3.6

2024-01-31

PREAI

Lundh, James Spencer; Pavlidis, Georges; Sasaki, Kohei; Centrone, Andrea; Spencer, Joseph A.; Masten, Hannah N.; Currie, Marc; Jacobs, Alan G.; Konishi, Keita; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Experimental determination of critical thickness limitations of (010) β-(AlxGa1-x)2O3 heteroepitaxial films

APPLIED PHYSICS LETTERS

IF3.6

2023-11-27

PREAI

Lundh, James Spencer; Huynh, Kenny; Liao, Michael; Olsen, William; Pan, Kaicheng; Sasaki, Kohei; Konishi, Keita; Masten, Hannah N.; Hite, Jennifer K.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Goorsky, Mark; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J.

Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers

APPLIED PHYSICS LETTERS

IF3.6

2023-06-12

OAAI

Liao, Michael E.; Mahadik, Nadeemullah A.; Gallagher, James C.; Gunning, Brendan P.; Kaplar, Robert J.; Anderson, Travis J.

Using machine learning with optical profilometry for GaN wafer screening

SCIENTIFIC REPORTS

IF3.9

2023-02-27

OAAI

Gallagher, James C.; Mastro, Michael A.; Ebrish, Mona A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

APPLIED PHYSICS LETTERS

IF3.6

2022-11-07

OAAI

Spencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D.

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

SCIENTIFIC REPORTS

IF3.9

2022-01-13

OAAI

Gallagher, James C.; Ebrish, Mona A.; Porter, Matthew A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-28

PREAI

Tadjer, Marko J.; Alema, Fikadu; Osinsky, Andrei; Mastro, Michael A.; Nepal, Neeraj; Woodward, Jeffrey M.; Myers-Ward, Rachael L.; Glaser, Evan R.; Freitas, Jaime A.; Jacobs, Alan G.; Gallagher, James C.; Mock, Alyssa L.; Pennachio, Daniel J.; Hajzus, Jenifer; Ebrish, Mona; Anderson, Travis J.; Hobart, Karl D.; Hite, Jennifer K.; Eddy Jr., Charles R.

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

APPLIED PHYSICS LETTERS

IF3.6

2020-08-28

OAAI

Foster, Geoffrey M.; Koehler, Andrew; Ebrish, Mona; Gallagher, James; Anderson, Travis; Noesges, Brenton; Brillson, Leonard; Gunning, Brendan; Hobart, Karl D.; Kub, Francis

Room-temperature skyrmions in strain-engineered FeGe thin films 应变工程FeGe薄膜中的室温skyrmii

PHYSICAL REVIEW B

IF3.7

2020-06-08

PREAI

Budhathoki, Sujan; Sapkota, Arjun; Law, Ka Ming; Ranjit, Smriti; Nepal, Bhuwan; Hoskins, Brian D.; Thind, Arashdeep Singh; Borisevich, Albina Y.; Jamer, Michelle E.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Stephen, Gregory M.; Heiman, Don; Mewes, Tim; Mishra, Rohan; Gallagher, James C.; Hauser, Adam J.

Study of NH3 plasma damage on GaAs Schottky diode in inductively coupled plasma system

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Meyer, LC; Lee, JW; Johnson, D; Huang, M; Ren, F; Anderson, TJ; LaRoche, JR; Lothian, JR; Abernathy, CR; Pearton, SJ

High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography

APL MATERIALS

IF4.5

2018-12-14

OAAI

Mahadik, Nadeemullah A.; Tadjer, Marko J.; Bonanno, Peter L.; Hobart, Karl D.; Stahlbush, Robert E.; Anderson, Travis J.; Kuramata, Akito

High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

APPLIED PHYSICS LETTERS

IF3.6

2018-11-06

PREAI

Tadjer, Marko J.; Koehler, Andrew D.; Freitas, Jaime A., Jr.; Gallagher, James C.; Specht, Matty C.; Glaser, Evan R.; Hobart, Karl D.; Anderson, Travis J.; Kub, Fritz J.; Thieu, Quang T.; Sasaki, Kohei; Wakimoto, Daiki; Goto, Ken; Watanabe, Shinya; Kuramata, Akito

Electrical characterization of ALD HfO2 high-k dielectrics on ((2)over-bar01) β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2018-01-25

OAAI

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R., Jr.; Christou, Aris

Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond 同时测定多晶金刚石中的晶格热导率和晶粒/晶粒热阻

ACTA MATERIALIA

IF9.3

2017-10-01

OAAI

Anaya, J.; Bai, T.; Wang, Y.; Li, C.; Goorsky, M.; Bougher, T. L.; Yates, L.; Cheng, Z.; Graham, C. S.; Hobart, K. D.; Feygelson, T. I.; Tadjer, M. J.; Anderson, T. J.; Pate, B. B.; Kuball, M.

研究方向